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May 2013
FDC8601
N-Channel Shielded Gate PowerTrench ? MOSFET
100 V, 2.7 A, 109 m Ω
Features
General Description
Shielded Gate MOSFET Technology
This N-Channel MOSFET is
produced using Fairchild
Max r DS(on) = 109 m Ω at V GS = 10 V, I D = 2.7 A
Max r DS(on) = 176 m Ω at V GS = 6 V, I D = 2.1 A
High performance trench technology for extremely low r DS(on)
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
S
Semiconductor‘s advanced PowerTrench ? process that
incorporates Shielded Gate technology. This process has been
optimized for r DS(on) , switching performance and ruggedness.
Applications
Load Switch
Synchronous Rectifier
Primary Switch
D
S
4
3
G
D
D
5
2
D
G
D
Pin 1
D
D
6
1
D
SuperSOT TM -6
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
100
±20
Units
V
V
I D
E AS
P D
T J , T STG
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
2.7
12
13
1.6
0.8
-55 to +150
A
mJ
W
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
30
78
°C/W
Package Marking and Ordering Information
Device Marking
.861
Device
FDC8601
Package
SSOT-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C1
1
www.fairchildsemi.com
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